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1 ota features description buffer features OPA860 features applications OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 wide bandwidth operational transconductance amplifier (ota) and buffer 2 wide bandwidth (80mhz, open-loop, g = +5) the OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high high slew rate (900v/ s) performance video, rf and if circuitry. it includes a high transconductance (95ma/v) wideband, bipolar operational transconductance external i q -control amplifier (ota), and voltage buffer amplifier. the ota or voltage-controlled current source can be viewed as an ideal transistor. like a transistor, it has closed-loop buffer three terminals ? a high impedance input (base), a wide bandwidth (1600mhz, v o = 1v pp ) low-impedance input/output (emitter), and the current high slew rate (4000v/ s) output (collector). the ota, however, is self-biased and bipolar. the output collector current is zero for a 60ma output current zero base-emitter voltage. ac inputs centered about zero produce an output current, which is bipolar and centered about zero. the transconductance of the low quiescent current (11.2ma) ota can be adjusted with an external resistor, versatile circuit function allowing bandwidth, quiescent current, and gain trade-offs to be optimized. also included in the OPA860 is an uncommited baseline restore circuits closed-loop, unity-gain buffer. this provides video/broadcast equipment 1600mhz bandwidth and 4000v/ s slew rate. communications equipment used as a basic building block, the OPA860 high-speed data acquisition simplifies the design of agc amplifiers, led driver wideband led driver circuits for fiber optic transmission, integrators for fast pulses, fast control loop amplifiers and control agc-multiplier amplifiers for capacitive sensors and active filters. ns-pulse integrator the OPA860 is available in an so-8 surface-mount control loop amplifier package. opa660 upgrade 1 please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 all trademarks are the property of their respective owners. production data information is current as of publication date. copyright ? 2005 ? 2008, texas instruments incorporated products conform to specifications per the terms of the texas instruments standard warranty. production processing does not necessarily include testing of all parameters.
absolute maximum ratings (1) OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ordering information (1) specified package temperature package ordering transport media, product package designator range marking number quantity OPA860id rails, 75 OPA860 so-8 d ? 45 c to +85 c OPA860 OPA860idr tape and reel, 2500 (1) for the most current package and ordering information see the package option addendum at the end of this document, or see the ti web site at www.ti.com . power supply 6.5v dc internal power dissipation see thermal information differential input voltage 1.2v input common-mode voltage range v s storage temperature range: d ? 65 c to +125 c lead temperature (soldering, 10s) +300 c junction temperature (t j ) +150 c esd rating: human body model (hbm) (2) 1500v charge device model (cdm) 1000v (1) stresses above these ratings may cause permanent damage. exposure to absolute maximum conditions for extended periods may degrade device reliability. these are stress ratings only, and functional operations of the device at these and any other conditions beyond those specified is not supported. (2) pin 2 > 500v hbm. pin configuration 2 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 12 3 4 87 6 5 i q adjust eb v - = - 5v c v+ = +5v out in +1 t op v iew so
electrical characteristics: v s = 5v OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 r l = 500 ? and r adj = 250 ? , unless otherwise noted. OPA860id typ min/max over temperature 0 c to ? 40 c to min/ test parameter conditions +25 c +25 c (2) 70 c (3) +85 c (3) units max level (1) closed loop ota + buffer (see figure 53 ) ac performance g = +2, see figure 53 bandwidth v o = 200mv pp 470 380 375 370 mhz min b v o = 1v pp 470 mhz typ c v o = 5v pp 350 mhz typ c bandwidth for 0.1db gain flatness v o = 200mv pp 42 mhz typ c slew rate v o = 5v step 3500 3000 2800 2700 v/ m s typ c rise time and fall time v o = 1v step 0.7 ns typ c harmonic distortion g = +2, v o = 2v pp , 5mhz 2nd-harmonic r l = 100 ? ? 54 dbc typ c r l = 500 ? ? 77 dbc typ c 3rd-harmonic r l = 100 ? ? 66 dbc typ c r l = 500 ? ? 79 dbc typ c ota - open-loop (see figure 48 ) ac performance g = +5, v o = 200mv pp , bandwidth 80 77 75 74 mhz min b r l = 500 ? g = +5, v o = 1v pp 80 mhz typ c g = +5, v o = 5v pp 80 mhz typ c slew rate g = +5, v o = 5v step 900 860 850 840 v/ s min b rise time and fall time v o = 1v step 4.4 ns typ c harmonic distortion g = +5, v o = 2v pp , 5mhz 2nd-harmonic r l = 500 ? ? 68 ? 55 ? 54 ? 53 db max b 3rd-harmonic r l = 500 ? ? 57 ? 52 ? 51 ? 49 db max b base input voltage noise f > 100khz 2.4 3.0 3.3 3.4 nv/ hz max b base input current noise f > 100khz 1.65 2.4 2.45 2.5 pa/ hz max b emitter input current noise f > 100khz 5.2 15.3 16.6 17.5 pa/ hz max b ota dc performance (4) (see figure 48 ) min ota transconductance v o = 10mv, r c = 0 ? , r e = 0 ? 95 80 77 75 ma/v min a max ota transconductance v o = 10mv, r c = 0 ? , r e = 0 ? 95 150 155 160 ma/v min a b-input offset voltage v b = 0v, r c = 0 ? , r e = 100 ? 3 12 15 20 mv max a average b-input offset voltage drift v b = 0v, r c = 0 ? , r e = 100 ? 3 67 120 m v/ c max b b-input bias current v b = 0v, r c = 0 ? , r e = 100 ? 1 5 6 6.6 m a max a average b-input bias current drift v b = 0v, r c = 0 ? , r e = 100 ? 20 25 na/ c max b e-input bias current v b = 0v, v c = 0v 30 100 125 140 m a max a average e-input bias current drift v b = 0v, v c = 0v 500 600 na/ c max b c-output bias current v b = 0v, v c = 0v 5 18 30 38 m a max a average c-output bias current drift v b = 0v, v c = 0v 250 300 na/ c max b ota input (see figure 48 ) b-input voltage range 4.2 3.7 3.6 3.6 v min b b-input impedance 455 || 2.1 k ? || pf typ c min e-input input resistance 10.5 12.5 13.0 13.3 ? min b max e-input input resistance 10.5 6.7 6.5 6.3 ? max b (1) test levels: (a) 100% tested at +25 c. over temperature limits set by characterization and simulation. (b) limits set by characterization and simulation. (c) typical value only for information. (2) junction temperature = ambient for +25 c specifications. (3) junction temperature = ambient at low temperature limit; junction temperature = ambient + 8 c at high temperature limit for over temperature specifications. (4) current is considered positive out of node. v cm is the input common-mode voltage. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 3 product folder link(s): OPA860
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com electrical characteristics: v s = 5v (continued) r l = 500 ? and r adj = 250 ? , unless otherwise noted. OPA860id typ min/max over temperature 0 c to ? 40 c to min/ test parameter conditions +25 c +25 c (2) 70 c (3) +85 c (3) units max level (1) ota output e-output voltage compliance i e = 1ma 4.2 3.7 3.6 3.6 v min a e-output current, sinking/sourcing v e = 0 15 10 9 9 ma min a c-output voltage compliance i c = 1ma 4.7 4.0 3.9 3.9 v min a c-output current, sinking/sourcing v c = 0 15 10 9 9 ma min a c-output impedance 54 || 2 k ? || pf typ c buffer (see figure figure 45 ) ac performance bandwidth v o = 200mv pp 1200 750 720 700 mhz min b v o = 1v pp 1600 mhz typ c v o = 5v pp 1000 mhz typ c slew rate v o = 5v step 4000 3500 3200 3000 v/ m s min b rise time and fall time v o = 1v step 0.4 ns typ c settling time to 0.05% v o = 1v step 6 ns typ c harmonic distortion v o = 2v pp , 5mhz 2nd-harmonic r l = 100 ? ? 52 ? 47 ? 46 ? 44 dbc max b r l 500 ? ? 72 ? 65 ? 63 ? 61 dbc max b 3rd-harmonic r l = 100 ? ? 67 ? 63 ? 63 ? 62 dbc max b r l 500 ? ? 96 ? 86 ? 85 ? 83 dbc max b input voltage noise f > 100khz 4.8 5.1 5.6 6.0 nv/ hz max b input current noise f > 100khz 2.1 2.6 2.7 2.8 pa/ hz max b differential gain ntsc, pal 0.06 % typ c differential phase ntsc, pal 0.02 degrees typ c buffer dc performance gain r l = 500 ? 1 0.98 0.98 0.98 v/v min a r l = 500 ? 1 1 1 1 v/v max a input offset voltage 16 30 36 38 mv max a average input offset voltage drift 125 125 m v/ c max b input bias current 3 7 8 8.5 m a max a average input bias current drift 20 20 na/ c max b buffer input input impedance 1.0 || 2.1 m ? || pf typ c buffer output output voltage swing r l = 500 ? 4.0 3.8 3.8 3.8 v min a output current v o = 0 60 50 49 48 ma min a closed-loop output impedance f 100khz 1.4 ? typ c power supply (ota + buffer) specified operating voltage 5 v typ c maximum operating voltage 6.5 6.5 6.5 v max a minimum operating voltage 2.5 2.5 2.5 v min b maximum quiescent current r adj = 250 ? 11.2 12 13.5 14.5 ma max a minimum quiescent current r adj = 250 ? 11.2 10.5 9.5 7.9 ma min a ota power-supply rejection ratio i c / v s 20 50 60 65 a/v max a (+psrr) buffer power-supply rejection ratio v o / v s 54 48 46 45 db min a ( ? psrr) thermal characteristics specification: id ? 40 to +85 c typ c thermal resistance q ja d so-8 junction-to-ambient 125 c/w typ c 4 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860
typical characteristics: v s = 5v OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. (see figure 53 .) ota + buf performance small-signal frequency response large-signal frequency response figure 1. figure 2. small-signal frequency response vs quiescent current gain flatness vs quiescent current figure 3. figure 4. small-signal pulse response large-signal pulse response figure 5. figure 6. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 5 product folder link(s): OPA860 150 100 50 0 - 50 - 100 - 150 time (5ns/div) output voltage (mv) g = +2v/v v in = 0.125v pp f in = 20mhz 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 time (5ns/div) output voltage (v) g = +2v/v v in = 1.25v pp f in = 20mhz 96 3 0 - 3 - 6 - 9 frequency (hz) gain (db) 1m 10m 100m 2g 1g g = +2v/v r l = 500 w v out = 0.2v pp v out = 0.5v pp 96 3 0 - 3 - 6 - 9 frequency (hz) gain (db) 1m 10m 100m 2g 1g g = +2v/v r l = 500 w v out = 2v pp v out = 5v pp v out = 1v pp 96 3 0 - 3 - 6 - 9 frequency (hz) gain (db) 1m 10m 100m 2g 1g g = +2v/v r l = 500 w v o = 0.2v pp i q = 8ma i q = 9ma i q = 11.2ma i q = 12ma 6.5 6.4 6.3 6.2 6.1 6.0 5.9 5.8 5.7 5.6 5.5 frequency (mhz) gain (db) 1 10 100 g = +2v/v r l = 500 w v o = 0.2v pp i q = 11.2ma i q = 8ma i q = 12ma i q = 9ma
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com typical characteristics: v s = 5v (continued) at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. (see figure 53 .) harmonic distortion vs frequency harmonic distortion vs output resistance figure 7. figure 8. harmonic distortion vs output voltage harmonic distortion vs supply voltage figure 9. figure 10. harmonic distortion vs quiescent current quiescent current vs r adj figure 11. figure 12. 6 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 13 12 11 10 98 7 6 5 r adj ( w ) quiescent current (ma) 0.1 1 10 100 1k 10k 100k +i q - i q - 55 - 60 - 65 - 70 - 75 - 80 - 85 - 90 frequency (mhz) harmonic distortion (dbc) 0.1 1 10 20 g = +2v/v r l = 500 w v o = 2v pp see figure 53 2nd?harmonic 3rd?harmonic - 50 - 55 - 60 - 65 - 70 - 75 - 80 - 85 output resistance ( w ) harmonic distortion (dbc) 100 1k g = +2v/v v o = 2v pp f = 5mhz see figure 53 2nd?harmonic 3rd?harmonic - 65 - 70 - 75 - 80 - 85 - 90 - 95 - 100 output voltage (v pp ) harmonic distortion (dbc) 0.1 1 10 g = +2v/v r l = 500 w f = 5mhz see figure 53 2nd?harmonic 3rd?harmonic - 60 - 65 - 70 - 75 - 80 - 85 - 90 supply voltage ( v s ) harmonic distortion (dbc) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2nd?harmonic 3rd?harmonic g = +2v/v r l = 500 w v o = 2v pp f = 5mhz see figure 53 - 50 - 55 - 60 - 65 - 70 - 75 - 80 - 85 - 90 i q (ma) harmonic distortion (dbc) 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 g = +2v/v r l = 500 w v o = 2v pp f = 5mhz see figure 53 2nd?harmonic 3rd?harmonic
typical characteristics: v s = 5v OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. ota performance ota transconductance vs frequency ota transconductance vs quiescent current figure 13. figure 14. ota transconductance vs input voltage ota transfer characteristics figure 15. figure 16. ota small-signal pulse response ota large-signal pulse response figure 17. figure 18. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 7 product folder link(s): OPA860 1000 100 10 frequency (hz) transconductance (ma/v) 1m 10m 100m 1g r l = 50 w v in = 10mv pp i q = 12.5ma (117ma/v) i q = 11.2ma (102ma/v) i q = 9ma (79ma/v) i q = 7.5ma (51ma/v) i o u t v in 50 w 50 w 150 120 90 60 30 0 quiescent current (ma) transconductance (ma/v) 6 7 8 9 10 11 12 13 i out v in 50 w 50 w v in = 100mv pp 160 140 120 100 80 60 40 20 0 input voltage (mv) transconductance (ma/v) - 40 - 30 - 20 - 10 0 10 20 30 40 i q = 12ma i q = 11.2ma i q = 9ma i q = 7ma small signal around input voltage. 86 4 2 0 - 2 - 4 - 6 - 8 ota input voltage (mv) ota output current (ma) - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 i q = 12ma i q = 11.2ma i q = 9ma i q = 7ma i out v in 50 w 50 w 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 time (10ns/div) output voltage (v) g = +5v/v r l = 500 w v in = 0.25v pp f in = 20mhz see figure 48 32 1 0 - 1 - 2 - 3 time (10ns/div) output voltage (v) g = +5v/v r l = 500 w v in = 1v pp f in = 20mhz see figure 48
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com typical characteristics: v s = 5v (continued) at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. b-input resistance vs quiescent current c-output resistance vs quiescent current figure 19. figure 20. e-output resistance vs quiescent current input voltage and current noise density figure 21. figure 22. 1mhz ota voltage and current noise density vs quiescent current adjust resistor figure 23. 8 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 16 14 12 10 86 4 2 0 quiescent current adjust resistor ( w ) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 input voltage noise density (nv/ hz) input current noise density (pa/ hz) e?input current noise (pa/ hz) b?input voltage noise (nv/ hz) b?input current noise (pa/ hz) 500 490 480 470 460 450 440 430 quiescent current (ma) ota b?input resistance (k w ) 7 8 9 10 11 12 13 120 110 100 90 80 70 60 50 40 quiescent current (ma) ota c?output resistance (k w ) 7 8 9 10 11 12 13 60 50 40 30 20 10 0 quiescent current (ma) ota e?output resistance ( w ) 7 8 9 10 11 12 13 100 10 1 frequency (hz) 100 1k 10k 100k 1m 10m input voltage noise density (nv/ hz) input current noise density (pa/ hz) e?input current noise (5.2pa/ hz) b?input voltage noise (2.4nv/ hz) b?input current noise (1.65pa/ hz)
typical characteristics: v s = 5v OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. buf performance buffer bandwidth vs output voltage buffer bandwidth vs load resistance figure 24. figure 25. buffer gain flatness buffer small-signal pulse response figure 26. figure 27. buffer large-signal pulse response harmonic distortion vs frequency figure 28. figure 29. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 9 product folder link(s): OPA860 63 0 - 3 - 6 - 9 frequency (hz) gain (db) 1m 10m 100m 2g 1g r l = 500 w v o = 0.6v pp v o = 0.2v pp v o = 5v pp v o = 2.8v pp v o = 1.4v pp 63 0 - 3 - 6 - 9 frequency (hz) gain (db) 1m 10m 100m 2g 1g v o = 0.2v pp r l = 1k w r l = 500 w r l = 100 w 0.20 0.15 0.10 0.05 0 - 0.05 - 0.10 - 0.15 - 0.20 time (10ns/div) output voltage (v) r l = 500 w v in = 0.2v pp f in = 20mhz input voltage output voltage 0.5 0.4 0.3 0.2 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 frequency (mhz) gain (db) 1 10 100 400 32 1 0 - 1 - 2 - 3 time (10ns/div) output voltage (v) r l = 500 w v in = 3v pp f in = 20mhz input voltage output voltage - 40 - 50 - 60 - 70 - 80 - 90 - 100 frequency (mhz) harmonic distortion (dbc) 1 10 100 r l = 500 w v o = 2v pp 2nd?harmonic 3rd?harmonic
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com typical characteristics: v s = 5v (continued) at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. 5mhz harmonic distortion vs load resistance harmonic distortion vs output voltage figure 30. figure 31. 5mhz harmonic distortion vs supply voltage buffer transfer function figure 32. figure 33. input voltage and current noise density buffer output impedance figure 34. figure 35. 10 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 100 10 1 frequency (hz) 100 1k 10k 100k 1m 10m input voltage noise density (nv/ hz) input current noise density (pa/ hz) input current noise (2.1pa/ hz) input voltage noise (4.8nv/ hz) 100 10 1 frequency (hz) output impedance ( w ) 10k 100k 1m 10m 100m 1g - 40 - 50 - 60 - 70 - 80 - 90 - 100 load resistance ( w ) harmonic distortion (dbc) 100 1k r l = 500 w v o = 2v pp 2nd?harmonic 3rd?harmonic - 60 - 70 - 80 - 90 - 100 - 110 output voltage (v pp ) harmonic distortion (dbc) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r l = 500 w f = 5mhz 2nd?harmonic 3rd?harmonic - 60 - 65 - 70 - 75 - 80 - 85 - 90 - 95 - 100 supply voltage ( v s ) harmonic distortion (dbc) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2nd?harmonic 3rd?harmonic r l = 500 w v o = 2v pp 54 3 2 1 0 - 1 - 2 - 3 - 4 - 5 input voltage (v) output voltage (v) - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5
OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 typical characteristics: v s = 5v (continued) at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. buffer group delay time vs frequency buffer output voltage and current limitations figure 36. figure 37. quiescent current vs temperature power-supply rejection ratio vs frequency figure 38. figure 39. voltage range vs temperature output current vs temperature figure 40. figure 41. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 11 product folder link(s): OPA860 1.2 1.0 0.8 0.6 0.4 0.2 0 - 0.2 frequency (mhz) group delay time (ns) 0 100 200 300 400 500 600 700 800 900 1000 54 3 2 1 0 - 1 - 2 - 3 - 4 - 5 output current (ma) output voltage (v) - 300 - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 300 1w internal power limit 1w internal power limit 25 w load line 50 w load line 100 w load line 16 15 14 13 12 11 10 98 7 6 ambient temperature ( c) quiescent current (ma) - 40 - 20 0 20 40 60 80 100 120 50 45 40 35 30 25 20 15 10 50 frequency (hz) psrr (db) 10k 100k 1m 10m 100m - psrr +psrr 4.10 4.05 4.00 3.95 3.90 ambient temperature ( c) output voltage swing (v) - 40 - 20 0 20 40 60 80 100 120 +v o - v o 56.0 55.8 55.6 55.4 55.2 55.0 54.8 54.6 54.4 54.2 54.0 temperature ( c) output current (ma) - 40 - 20 0 20 40 60 80 100 120 output current sinking, sourcing
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com typical characteristics: v s = 5v (continued) at t a = +25 c, i q = 11.2ma, and r l = 500 ? , unless otherwise noted. dc drift vs temperature c-output bias current vs temperature figure 42. figure 43. 12 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 30 25 20 15 10 50 ambient temperature ( c) input offset voltage (mv) 65 4 3 2 1 0 input bias current ( m a) - 40 - 20 0 20 40 60 80 100 120 buffer input offset voltage (v os ) buffer input bias current (i b ) 40 30 20 10 0 - 10 - 20 - 30 - 40 ambient temperature ( c) ota c?output bias current ( m a) - 40 - 20 0 20 40 60 80 100 120 five representative units
application information buffer section ? an overview transconductance (ota) section ? an OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 the OPA860 combines a high-performance buffer with a transconductance section. this transconductance section is discussed in the ota the buffer section of the OPA860 is an 1600mhz, (operational transconductance amplifier) section of 4000v/ s closed-loop buffer that can be used as a this data sheet. over the years and depending on the building block for agc amplifiers, led driver circuit, writer, the ota section of an op amp has been integrator for fast pulse, fast control loop amplifiers, referred to as a diamond transistor, and control amplifiers for capacitive sensors and voltage-controlled current source, transconductor, active filters. the buffer section does not share the macro transistor, or positive second-generation bias circuit of the ota section; thus, it is not affected current conveyor (ccii+). corresponding symbols for by changes in the i q adjust resistor (r adj ). these terms are shown in figure 44 . overview the symbol for the ota section is similar to a transistor (see figure 44 ). applications circuits for the ota look and operate much like transistor circuits ? the transistor is also a voltage-controlled current source. not only does this characteristic simplify the understanding of application circuits, it aids the circuit optimization process as well. many of the same intuitive techniques used with transistor designs apply to ota circuits. the three terminals of the ota are labeled b, e, and c. this labeling calls attention to its similarity to a transistor, yet draws distinction for clarity. while the ota is similar to a transistor, one essential difference is the sense of the c-output current: it flows out the c terminal for positive b-to-e input voltage and in the c terminal for figure 44. symbols and terms negative b-to-e input voltage. the ota offers many advantages over a discrete transistor. the ota is regardless of its depiction, the ota section has a self-biased, simplifying the design process and high-input impedance (b input), a low-input/output reducing component count. in addition, the ota is far impedance (e input), and a high impedance current more linear than a transistor. transconductance of source output (c output). the ota is constant over a wide range of collector currents ? this feature implies a fundamental improvement of linearity. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 13 product folder link(s): OPA860 1 32 c e b c e b v in1 i out v in2 v in1 i out v in2 ccii+ z diamond transistor voltage?controlled current source transconductor macro transistor current conveyor ii+
basic connections quiescent current control pin OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com it is also possible to vary the quiescent current with a control signal. the control loop in figure 45 shows figure 46 shows basic connections required for 1/2 of a ref200 current source used to develop operation. these connections are not shown in 100mv on r 1 . the loop forces 125mv to appear on subsequent circuit diagrams. power-supply bypass r 2 . total quiescent current of the OPA860 is capacitors should be located as close as possible to approximately 37 i 1 , where i 1 is the current made to the device pins. solid tantalum capacitors are flow out of pin 1. generally best. the quiescent current of the transconductance portion of the OPA860 is set with a resistor, r adj , connected from pin 1 to ? v s . it affects only the operating currents of ota sections. the bias circuitry of the buffer section is independent of the bias circuitry for the ota section; therefore, the quiescent current cannot go below 5.8ma. the maximum quiescent current is 12.7ma. r adj should be set between 50 ? and 1k ? for optimal performance of the ota section. this range corresponds to the 12.5ma quiescent current for r adj = 50 ? , and 9ma for r adj = 1k ? . if the i q adjust pin is connected to the negative supply, the quiescent current will be set by the 250 ? internal resistor. figure 45. optional control loop for setting quiescent current reducing or increasing the quiescent current for the ota section controls the bandwidth and ac behavior as well as the transconductance. with r adj = 250 ? , this sets approximately 11.2ma total quiescent current at 25 c. it may be appropriate in some applications to trim this resistor to achieve the desired quiescent current or ac performance. applications circuits generally do not show the resistor r q , but it is required for proper operation. with a fixed r adj resistor, quiescent current increases with temperature (see figure 43 in the typical characteristics section). this variation of current with temperature holds the transconductance, g m , of the ota relatively constant with temperature (another advantage over a transistor). 14 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 r 1 1.25k w tlv2262 OPA860 1/2 ref200 100 m a r 2 425 w v+ i q adjust 1 i 1
common-e amplifier or forward amplifier basic applications circuits (1) OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 figure 46. basic connections with this control loop, quiescent current will be nearly constant with temperature. since this differs from the temperature-dependent behavior of the internal figure 47 compares the common-emitter current source, other temperature-dependent configuration for a bjt with the common-e amplifier behavior may differ from that shown in the typical for the ota section. there are several advantages in characteristics. the circuit of figure 45 will control using the ota section in place of a bjt in this the i q of the ota section of the OPA860 somewhat configuration. notably, the ota does not require any more accurately than with a fixed external resistor, biasing, and the transconductance gain remains r q . otherwise, there is no fundamental advantage to constant over temperature. the output offset voltage using this more complex biasing circuitry. it does, is close to 0, compared with several volts for the however, demonstrate the possibility of common-emitter amplifier. signal-controlled quiescent current. this capability the gain is set in a similar manner as for the bjt may suggest other possibilities such as agc, equivalent with equation 1 : dynamic control of ac behavior, or vco. most applications circuits for the ota section consist just as transistor circuits often use emitter of a few basic types, which are best understood by degeneration, ota circuits may also use analogy to a transistor. used in voltage-mode, the degeneration. this option can be used to reduce the ota section can operate in three basic operating effects that offset voltage and offset current might states ? common emitter, common base, and otherwise have on the dc operating point of the ota. common collector. in the current-mode, the ota can the e-degeneration resistor may be bypassed with a be useful for analog computation such as current large capacitor to maintain high ac gain. other amplifier, current differentiator, current integrator, and circumstances may suggest a smaller value capacitor current summer. used to extend or optimize high-frequency performance. copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 15 product folder link(s): OPA860 12 3 4 87 6 5 +1 r s (25 w to 200 w ) r s (25 w to 200 w ) 49.9 w 0.1 m f r adj 250 w - 5v (1) + 2.2 m f 0.1 m f solid tantalum +5v (1) + 2.2 m f solid tantalum r q = 250 w , roughly sets i q = 11.2ma. note: (1) v s = 6.5v absolute maximum. +v s - v s 49.9 w v i v o g r l 1 g m r e
(2) OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com the forward amplifier shown in figure 48 and figure 49 corresponds to one of the basic circuits used to characterize the OPA860. extended characterization of this topology appears in the typical characteristics section of this data sheet. figure 48. forward amplifier configuration and test circuit figure 47. common-emitter vs common-e amplifier the transconductance of the ota with degeneration can be calculated by equation 2 : a positive voltage at the b-input, pin 3, causes a positive current to flow out of the c-input, pin 8. figure 47 b shows an amplifier connection of the ota, the equivalent of a common-emitter transistor amplifier. input and output can be ground-referenced figure 49. forward amplifier design equations without any biasing. the amplifier is noninverting because of the sense of the output current. 16 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 r 1 160 w v i v o 3 b 2 e c 8 r e 78 w r c 500 w g = 5v/v i q = 11.2ma ota 100 w v i v+ v - v i v o 3 b 2 e c 8 r s r s r l r e v o r e r l inverting gain v os = several volts noninverting gain v os = 0v (a) common?emitter amplifier transconductance varies over temperature. (b) common?e amplifier transconductance remains constant over temperature. ota g m_deg 1 1 g m r e g = at i = 11.2ma q g = at i = 11.2ma q v i v o 3 2 8 r e r e r l2 r 1 100 w r in 50 w r = r + r || r l l1 l2 in ota r l1 network analyzer r l r + r e e r l r + 8 w e r = = 8 w e 1 102ma/v 1 g m r = e
common-c amplifier (4) current-mode analog computations (3) OPA860 applications common-b amplifier OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 figure 50 b shows the ota connected as an e-follower ? a voltage buffer. it is interesting to notice this low impedance can be converted to a high that the larger the r e resistor, the closer to unity gain impedance by inserting the buffer amplifier in series. the buffer will be. if the ota section is to be used as a buffer, use r e 500 ? for best results. for the ota section used as a buffer, the gain is given by equation 3 : as mentioned earlier, the ota section of the OPA860 can be used advantageously for analog computation. among the application possibilities are functionality as a current amplifier, current differentiator, current integrator, current summer, and weighted current summer. table 1 lists these different uses with the associated transfer functions. these functions can easily be combined to form active filters. some examples using these current-mode functions are shown later in this document. the OPA860 is comprised of both the ota section and the buffer section. this applications information focuses more on using both sections together to form various useful amplifiers. a more thorough description of the ota section in filter applications can be found in the opa861 data sheet, available for download at www.ti.com . figure 50. common-collector vs common-c amplifier a low value resistor in series with the b ota and buffer inputs is recommended. this resistor helps isolate trace parasitic from the inputs, reduces any tendency to oscillate, and controls frequency response peaking. typical resistor values are from 25 ? to 200 ? . figure 51 shows the common-b amplifier. this configuration produces an inverting gain and a low impedance input. equation 4 shows the gain for this configuration. figure 51. common-base transistor vs common-b ota copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 17 product folder link(s): OPA860 (b) common-b amplifier (a) common-base amplifier noninverting gain v olts os = several v r e v - v+ v o v in r l r 1 100 w 3 b 2 e c 8 ota r e v in r l inverting gain v = 0v os v o g = r l r + e 1 g m = - r l r e g r l r e 1 g m r l r e g 1 1 1 g m r e 1 g 1 1 1 g m r e 1 r o 1 g m 100 w v i 3 b 2 e c 8 g = 1 v o = 0v g = 1 v os = 0.7v ota r e v o (b) common?c amplifier (buffer) (a) common?collector amplifier (emitter follower) v o v i r e v - v+
direct feedback amplifier (5) OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com the gain for this topology is given by equation 5 : the direct feedback amplifier (shown in figure 53 ) topology has been used to characterize the OPA860. extended characterization of this topology appears in the typical characteristics section of this data sheet. this topology is obtained by closing the loop between the c-output and the e-input of the common-e topology, and then buffered. table 1. current-mode analog computation using the ota section functional element transfer function implementation with the ota section current amplifier current integrator current summer weighted current summer 18 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 g r 3 2 r 5 r 5 1 2 g m 1 r 3 2r 5 i out r 1 r 2 i in i out i in r 1 r 2 i out 1 c r i in dt i out i in c r i out n j 1 i j i out i 2 i n i 1 i out n j 1 i j r j r i out i 1 r r 1 i n r r n
current-feedback amplifier control-loop amplifier OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 loop amplifiers show an integrator behavior from dc to the frequency, represented by the rc time building a current-feedback amplifier with the constant of the network from the c-output to gnd. OPA860 is extremely simple. one advantage of above this frequency, they operate as an amp with building a current-feedback amplifier with the constant gain. the series connection increases the OPA860 instead of getting an off-the-shelf overall gain to about 110db and thus minimizes the current-feedback amplifier is the control gained on the control loop deviation. the differential configuration at bandwidth though the use of external capacitors. the inputs enables one to apply the measured output figure 54 shows a typical circuit for the OPA860 in a signal and the reference voltage to two identical noninverting current-feedback amplifier configuration. high-impedance inputs. the output buffer decouples input and output parasitic capacitances are shown. the c-output of the second ota in order to insure the r 1 is the output impedance of the c-output of the ac performance and to drive subsequent output ota section. c 1 is the output parasitic capacitance stages. on the c-output pin of the ota-section. c 2 is the input parasitic capacitance for the input of the buffer section. as shown in equation 6 , the poles formed by r 1 , c 1 , r 2 , and c 2 control the frequency response. the frequency response in this configuration is shown in figure 52 . setting an external capacitor on the c-output to ground allows adjusting the bandwidth. (6) note that both peaking and bandwidth can be adjusted by changing the feedback resistance, r f . a new type of control loop amplifier for fast and precise control circuits can be designed with the OPA860. the circuit of figure 55 shows a series figure 52. current-feedback architecture connection of two voltage control current sources that frequency response have an integral (and at higher frequencies, a proportional) behavior versus frequency. the control figure 53. direct feedback amplifier specification and test circuit copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 19 product folder link(s): OPA860 v out v in 1 r f r g 1 1 r f r g 1 g m r 1 [ 1 s ( r 1 c 1 r 1 c 2 r 2 c 2 ) s 2 r 1 c 1 c 2 ] 96 3 0 - 3 - 6 - 9 - 12 frequency (hz) gain (db) 1m 10m 100m 1g g = +2v/v r l = 500 w v o = 2v pp r 1 100 w v i v o 3 b 2 e c 8 7 6 5 r 5 133 w r 3 301 w r in 50 w g = +2v/v i q = 20ma ota r 4 453 w r 2 80.6 w network analyzer +1 +5v 1 4 - 5v 50 w r q 250 w 50 w source
OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com figure 54. OPA860 used in a noninverting current-feedback architecture figure 55. control-loop amplifier using two OPA860s 20 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 v out v in r e r g 249 w r f 259 w r 2 50 w 200 w r 1 50 w 500 w c 1 c 2 +1 OPA860 v out 5 +1 6 2 3 33 w 10pf 10 w 2 8 10 w 8 33 w 10pf v in 180 w 5 +1 6 v ref 180 w 3
dc-restore circuit comparator OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 the OPA860 can be used advantageously with an an interesting and also cost-effective circuit solution operational amplifier, here the opa820, as a using the OPA860 as a low-jitter comparator is shown dc-restore circuit. figure 56 illustrates this design. in figure 57 . at the same time, this circuit uses a depending on the collector current of the positive and negative feedback. the input is transconductance amplifier (ota) of the OPA860, a connected to the inverting e-input. the output signal switching function is realized with the diodes d 1 and is applied in a direct feedback over the two d 2 . antiparallel, connected gallium-arsenide diodes back to the emitter. a second feedback path over the rc when the c-output is sourcing current, the capacitor combination to the base, which is a positive c 1 is being charged. when the c-output is sinking feedback, accelerates the output voltage change current, d 1 is turned off and d 2 is turned on, letting when the input voltage crosses the threshold voltage. the voltage across c 1 be discharged through r 2 . the output voltage is limited to the threshold voltage of the back-to-back diodes. the condition to charge c 1 is set by the voltage difference between v ref and v out . for the ota c-output to source current, v ref has to be greater than v out . the rate of charge of c 1 is set by both r 1 and c 1 . the discharge rate is given by r 2 and c 1 . figure 56. dc restorer circuit copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 21 product folder link(s): OPA860 20 w 20 w 150 w +1 r 2 100k w v in 6 5 r 2 100 w r 1 40.2 w ccii b3 2 e c 8 v out v ref c 1 100pf d 1 d 2 opa656 the ota amplifier works as a current conveyor (ccii) in this c ircuit, with a current gain of 1. r 1 and c 1 set the dc restoration time constant. d 1 adds a propogation delay to the dc restoration. r 2 and c 1 set the decay time constant. d 1 , d 2 = 1n4148 r q = 1k w
integrator for ns-pulse (8) (7) OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com figure 57. comparator (low jitter) one very interesting application using the OPA860 in physical measurement technology is an open-loop ns-integrator (shown in figure 58 ) which can process where: pulses with an amplitude of 2.5v, have a rise/fall v o = output voltage time of as little as 2ns, and also have a pulse width of t = integration time more than 8ns. the voltage-controlled current source c = integration capacitance charges the integration capacitor linearly according to equation 7 : where: v c = voltage at pin 8 v be = base-emitter voltage g m = transconductance t = time c = integration capacitance the output voltage is the time integral of the input voltage. it can be calculated from equation 8 : figure 58. integrator for ns-pulses 22 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 r c5 150 w r c5 150 w r c5 150 w r s 47 w r 8 27k w r 5 47k w +1 r 2 10k w offset trim r q 250 w v in 6 8 1 4 7 32 5 r 2 100k w r 1 100k w c 3 2.2 m f d 1 d 2 v out ota +5v - 5v c 3 2.2pf c 3 2.2 m f 5 1 4 buf602 +5v c 3 2.2 m f - 5v c 3 2.2 m f +5v - 5v 0.5pf 2.5pf dmf3068a v o g m c t o v be dt v c v be g m t c 780 w v i ota 50 k w 50 w 3 2 e c 8 +5v - 5v v o 27pf 1 f m 620 w 200 w 820 w +1 6 5 b
video luminance matrix state-variable filters (10) (11) OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 the inverting amplifier in figure 59 amplifies the three input voltages that correspond to the luminance section of the rgb color signal. different feedback resistances weight the voltages differently, resulting in an output voltage consisting of 30% of the red, 59% of the green, and 11% of the blue section of the input voltage. the way in which the signal is weighted corresponds to the transformation equation for converting rgb pictures into b/w pictures. the figure 60. state variable filter block diagram output signal is the black/white replay. it might drive a monochrome control monitor or an analog printer (hardcopy output). figure 61. state variable filter using the OPA860 the transfer function is then: figure 59. video luminance matrix (9) the ability of the OPA860 to easily drive a capacitor can be put to good use in implementing state-variable filters. a state-variable filter, or khn filter, can be represented with integrators and coefficients. for example, the filter represented in the block diagram of figure 60 can easily be implemented with two OPA860s, as shown in figure 61 . copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 23 product folder link(s): OPA860 v in v out b c e b ce r 3 r 1 r v c 1 c 1 r 2 v in v out x1 x1 150 w ota 3 b 2 e c 8 v blue v luminance 1820 w (1) v green 340 w (1) v red 665 w (1) 200 w 200 w +1 6 5 r q = 250 w (i q = 11.2ma) note: (1) resistors shown are 1% values that produce 30%/59%/11% r/g/b mix. h ( s ) a 0 s 2 c 1 s c 0 r 1 r v 1 1 sc 2 r 1 r 2 r 3 s 2 c 1 c 2 r 1 r 2 0 1 c 1 c 2 r 1 r 2 q c 1 c 2 r 3 r 1 r 2
design-in tools demonstration boards macromodels and applications (13) thermal analysis noise performance OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com the total output spot noise voltage can be computed as the square root of the sum of all squared output noise voltage contributors. equation 12 shows the general form for the output noise voltage using the terms shown in figure 62 . a printed circuit board (pcb) is available to assist in the initial evaluation of circuit performance using the OPA860. this module is available free, as an unpopulated pcb delivered with descriptive documentation. the summary information for the (12) board is shown below: for the buffer, the noise model is shown in figure 63 . literature board part request equation 13 shows the general form for the output product package number number noise voltage using the terms shown in figure 63 . OPA860id so-8 dem-ota-so-1a sbou035a the board can be requested on texas instruments web site (www.ti.com ). support computer simulation of circuit performance using spice is often useful when analyzing the performance of analog circuits and systems. this principle is particularly true for video and rf amplifier circuits where parasitic capacitance and inductance can have a major effect on circuit performance. a spice model for the OPA860 is available through the figure 63. buffer noise analysis model texas instruments web page (www.ti.com ). these models do a good job of predicting small-signal ac and transient performance under a wide variety of operating conditions. they do not do as well in predicting the harmonic distortion. these models do not attempt to distinguish between the package types due to the high output power capability of the in their small-signal ac performance. OPA860, heatsinking or forced airflow may be required under extreme operating conditions. maximum desired junction temperature will set the the ota noise model consists of three elements: a maximum allowed internal power dissipation as voltage noise on the b-input; a current noise on the described below. in no case should the maximum b-input; and a current noise on the e-input. figure 62 junction temperature be allowed to exceed +150 c. shows the ota noise analysis model with all the operating junction temperature (t j ) is given by noise terms included. in this model, all noise terms t a + p d q ja . the total internal power dissipation are taken to be noise voltage or current density terms (p d ) is the sum of quiescent power (p dq ) and in either nv/ hz or pa/ hz. additional power dissipated in the output stage (p dl ) to deliver load power. quiescent power is simply the specified no-load supply current times the total supply voltage across the part. p dl will depend on the required output signal and load but would, for a grounded resistive load, be at a maximum when the output is fixed at a voltage equal to 1/2 of either supply voltage (for equal bipolar supplies). under this condition, p dl = v s 2 /(4 r l ) where r l includes feedback network loading. note that it is the power in the output stage and not into the load that determines internal power dissipation. figure 62. ota noise analysis model 24 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 e o e 2n r s i bn 2 4ktr s r l r g 1 g m 2 r g i bi 2 4ktr g r l 1 g m e n i n r s 4ktr s v o e o e 2n i n r s 2 4ktr s e n i bn i bi r s r g 4ktr s 4ktr s r l v o
board layout guidelines OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 as a worst-case example, compute the maximum t j supplies (for bipolar operation) will improve using an OPA860id in the circuit of figure 53 2nd-harmonic distortion performance. larger (2.2 f operating at the maximum specified ambient to 6.8 f) decoupling capacitors, effective at lower temperature of +85 c and driving a grounded 20 ? frequency, should also be used on the main supply load. pins. these may be placed somewhat farther from the device and may be shared among several p d = 10v 11.2ma + 5 2 /(4 20 ? ) = 424mw devices in the same area of the pc board. maximum t j = +85 c + (0.43w 125 c/w) = 139 c. c) careful selection and placement of external components will preserve the high-frequency although this is still well below the specified performance of the OPA860. resistors should be a maximum junction temperature, system reliability very low reactance type. surface-mount resistors considerations may require lower tested junction work best and allow a tighter overall layout. metal film temperatures. the highest possible internal or carbon composition, axially-leaded resistors can dissipation will occur if the load requires current to be also provide good high-frequency performance. forced into the output for positive output voltages or again, keep their leads and pc board traces as short sourced from the output for negative output voltages. as possible. never use wirewound type resistors in a this puts a high current through a large internal high-frequency application. voltage drop in the output transistors. the output v-i plot shown in the typical characteristics includes a d) connections to other wideband devices on the boundary for 1w maximum internal power dissipation board may be made with short, direct traces or under these conditions. through onboard transmission lines. for short connections, consider the trace and the input to the next device as a lumped capacitive load. relatively wide traces (50mils to 100mils) should be used, achieving optimum performance with a preferably with ground and power planes opened up high-frequency amplifier like the OPA860 requires around them. if a long trace is required at the buffer careful attention to board layout parasitics and output, and the 6db signal loss intrinsic to a external component types. recommendations that doubly-terminated transmission line is acceptable, will optimize performance include: implement a matched impedance transmission line using microstrip or stripline techniques (consult an a) minimize parasitic capacitance to any ac ground ecl design handbook for microstrip and stripline for all of the signal i/o pins. parasitic capacitance on layout techniques). a 50 ? environment is normally the output and inverting input pins can cause not necessary on board, and in fact, a higher instability: on the noninverting input, it can react with impedance environment will improve distortion as the source impedance to cause unintentional shown in the distortion versus load plots. bandlimiting. to reduce unwanted capacitance, a window around the signal i/o pins should be opened e) socketing a high-speed part like the OPA860 is in all of the ground and power planes around those not recommended. the additional lead length and pins. otherwise, ground and power planes should be pin-to-pin capacitance introduced by the socket can unbroken elsewhere on the board. create an extremely troublesome parasitic network that makes it almost impossible to achieve a smooth, b) minimize the distance ( < 0.25") from the stable frequency response. best results are obtained power-supply pins to high-frequency 0.1 f by soldering the OPA860 onto the board. decoupling capacitors. at the device pins, the ground and power-plane layout should not be in close proximity to the signal i/o pins. avoid narrow power and ground traces to minimize inductance between the pins and the decoupling capacitors. the power-supply connections should always be decoupled with these capacitors. an optional supply decoupling capacitor (0.1 f) across the two power copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 25 product folder link(s): OPA860
input and esd protection OPA860 sbos331c ? june 2005 ? revised august 2008 ....................................................................................................................................................... www.ti.com these diodes provide moderate protection to input overdrive voltages above the supplies as well. the the OPA860 is built using a very high-speed protection diodes can typically support 30ma complementary bipolar process. the internal junction continuous current. where higher currents are breakdown voltages are relatively low for these very possible (for example, in systems with 15v supply small geometry devices. these breakdowns are parts driving into the OPA860), current-limiting series reflected in the absolute maximum ratings table. all resistors should be added into the two inputs. keep device pins are protected with internal esd protection these resistor values as low as possible since high diodes to the power supplies as shown in figure 64 . values degrade both noise performance and frequency response. figure 64. internal esd protection 26 submit documentation feedback copyright ? 2005 ? 2008, texas instruments incorporated product folder link(s): OPA860 external pin +v cc - v cc internal circuitry
OPA860 www.ti.com ....................................................................................................................................................... sbos331c ? june 2005 ? revised august 2008 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision b (june 2006) to revision c .................................................................................................... page changed storage temperature range rating in absolute maximum ratings table from ? 40 c to +125 c to ? 65 c to +125 c ................................................................................................................................................................................... 2 changes from revision a (january 2006) to revision b ............................................................................................... page changed figure 49 ? corrected equations ........................................................................................................................... 16 changed figure 58 ? corrected resistor value .................................................................................................................... 22 copyright ? 2005 ? 2008, texas instruments incorporated submit documentation feedback 27 product folder link(s): OPA860
packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish msl peak temp (3) OPA860id active soic d 8 75 green (rohs & no sb/br) cu nipdau level-2-260c-1 year OPA860idg4 active soic d 8 75 green (rohs & no sb/br) cu nipdau level-2-260c-1 year OPA860idr active soic d 8 2500 green (rohs & no sb/br) cu nipdau level-2-260c-1 year OPA860idrg4 active soic d 8 2500 green (rohs & no sb/br) cu nipdau level-2-260c-1 year (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. -- the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis. package option addendum www.ti.com 1-jul-2009 addendum-page 1
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant OPA860idr soic d 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 q1 package materials information www.ti.com 14-jul-2012 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) OPA860idr soic d 8 2500 367.0 367.0 35.0 package materials information www.ti.com 14-jul-2012 pack materials-page 2

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